AON6926 30v dual asymmetric n-channel mosfet general description product summary q1 q2 30v 30 v i d (at v gs =10v) 44a 50 a r ds(on) (at v gs =10v) <11m ? <8.5m ? r ds(on) (at v gs = 4.5v) <14m ? <12m ? 100% uis tested 100% rg tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 24 35 29 steady-state 56 50 67 60 steady-state r jc 3.4 3 4 3.6 the AON6926 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. it includes two specialized mosfets in a dual power dfn5x6a package. the q1 "high side" mosfet is desgined to minimze switching losses. the q2 "low side" mosfet is an srfet? that features low r ds(on) to reduce conduction losses as well as an integrated schottky diode with low q rr and v f to reduce switching losses. the AON6926 is well suited for use in compact dc/dc converter applications. maximum junction-to-case c/w c/w maximum junction-to-ambient a d r ja maximum junction-to-ambient a c/w t c =25c t c =100c power dissipation b p d power dissipation a p dsm i d t c =25c t c =100c pulsed drain current c continuous drain current a t a =70c parameter absolute maximum ratings t a =25c unless otherwise noted 32 20 20 gate-source voltage drain-source voltage 30 mj avalanche current c continuous drain current a 910 27 v v v ds max q1 max q2 units units 15 36 11 a w avalanche energy l=0.1mh c 140 11 12 t a =25c i dsm 44 50 28 junction and storage temperature range -55 to 150 31 35 12.5 14 100 c thermal characteristics 1.9 2.1 1.2 1.3 w t a =70c t a =25c top view bottom view pin1 dfn5x6 top view bottom view bottom view rev0 : july 2010 www.aosmd.com page 1 of 1
AON6926 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =125c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v i d(on) 100 a 8.8 11 t j =125c 12 15 11.2 14 m ? ? q g (10v) 16 20 24 nc q g (4.5v) 7 9.5 11.4 nc q gs 2.7 nc q gd 5nc t d(on) 6.5 ns t r 2ns t d(off) 17 ns t f 3.5 ns t rr 7 8.7 10.5 ns q rr 11 13.5 16 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is limited by package. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta=25c. rev0 : july 2010 www.aosmd.com page 2 of 10
AON6926 q1-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 0.5 1.5 2.5 3.5 4.5 5.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 4 6 8 10 12 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 0 5 10 15 20 25 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 120 140 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 10v 4v 4.5v rev 0: july 2010 www.aosmd.com page 4 of 10
AON6926 q1-channel: typical electrical and thermal characteristic s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 1ms 100us dc r ds(on) limited t j(max) =150c t c =25c 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20 a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r jc =4c/w rev 0: july 2010 www.aosmd.com page 5 of 10
AON6926 q1-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 100 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c t a =150c t a =100c t a =125c r ja =67c/w rev 0: july 2010 www.aosmd.com page 6 of 10
AON6926 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.5 t j =125c 100 i gss 100 na v gs(th) gate threshold voltage 1.2 1.9 2.4 v i d(on) 140 a 6.9 8.5 t j =125c 9.8 12 9.3 12 m ? ? q g (10v) 12 16 20 nc q g (4.5v) 6 8 10 nc q gs 3nc q gd 3nc t d(on) 6ns t r 4ns t d(off) 19 ns t f 3ns t rr 91215 ns q rr 18 23 28 nc components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time gate source charge gate drain charge total gate charge total gate charge v gs =10v, v ds =15v, i d =20a m ? i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance i dss ma v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev0 : july 2010 www.aosmd.com page 3 of 10
AON6926 q2-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 12345 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 3 6 9 12 15 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =20a v gs =10v i d =20a 0 5 10 15 20 25 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 4.5v 10v 4v rev0 : july 2010 www.aosmd.com page 7 of 10
AON6926 q2-channel: typical electrical and thermal characteristic s 40 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0 2 4 6 8 10 0 3 6 9 12 15 18 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c r jc =3.6c/w 10ms rev0 : july 2010 www.aosmd.com page 8 of 10
AON6926 q2-channel: typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 100 0.000001 0.00001 0.0001 0.001 time in avalanche, t a (s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) t a =25c t a =150c t a =100c t a =125c r ja =60c/w rev0 : july 2010 www.aosmd.com page 9 of 10
AON6926 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: july 2010 www.aosmd.com page 10 of 10
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